Modelling the Field Soft Error Rate of DRAMs by varying the critical cell Charge
نویسندگان
چکیده
The Field Soft Error Rate (FSER) has been determined by the Variation of the critical Charge and the measurement of the Charge collection volume determined by alpha-particle irradiation. The modelled FSER versus critical Charge dependence agrees well to the one of the Field Soft Error measurements. The results futher Show, that the irnpact of the on-chip Alpha-Particle flux tan be neglected. Q 1998 Elsevier Science Ltd. All rights reserved.
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